A content addressable memory using magnetic domain wall motion cells

Author

Nebashi, R. ; Sakimura, N. ; Tsuji, Y. ; Fukami, S. ; Honjo, H. ; Saito, S. ; Miura, S. ; Ishiwata, N. ; Kinoshita, K. ; Hanyu, T. ; Endoh, T. ; Kasai, N. ; Ohno, H. ; Sugibayashi, T.

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

2011

fDate

15-17 June 2011

Firstpage

300

Lastpage

301

Abstract

A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, and the speed was the fastest to date. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. We also propose a CAM which has multiple contexts by improving the CAM cell circuit to enhance the SoC´s performance. The estimated cell area is 3.5 μm², which is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.

Keywords

CMOS memory circuits; content-addressable storage; magnetic domain walls; magnetoelectronics; CAM cell circuit; CMOS; SoC; Spin-CAM; content addressable memory; magnetic domain wall motion cells; size 90 nm; spintronic content addressable memory; time 5 ns; Computer aided manufacturing; Context; Current measurement; Magnetic field measurement; Magnetic tunneling; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits (VLSIC), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

2158-5601

Print_ISBN

978-1-61284-175-5

Type

conf

Filename

5986430