DocumentCode
551305
Title
Structural and electrical properties of inflamed graphite at high temperature as a new field emitter
Author
Koike, Takayoshi ; Jyouzuka, Atsuo ; Nakamura, Tomonori ; Onizuka, Yoshihiro ; Miyoshi, Motosuke ; Mimura, Hidenori
Author_Institution
Res. Lab., Onizuka Glass Co. Ltd., Ome, Japan
fYear
2011
fDate
18-22 July 2011
Firstpage
35
Lastpage
36
Abstract
We report a new carbon material with nanostructures, known as inflamed graphite at high temperature (IGHT). IGHT is fabricated by inflaming material in a mixture of hydrogen and oxygen gas at a temperature exceeding 2000°C. Fabricated IGHTs are encapsulated in a glass chamber in order to estimate the field emission current. The chamber pressure is as high as 10-7 Pa. A field emission current exceeding 350 μA is obtained from IGHT. An IGHT emits a stable current with a low current dispersion below the standard deviation/mean (σ/mean) of 2%.σ/mean reveals that the IGHT withstands ion bombardment.
Keywords
field emitter arrays; graphite; nanoelectronics; IGHT fabrication; carbon material; chamber pressure; current dispersion; electrical property; field emission current; field emitter; glass chamber; inflamed graphite at high temperature; inflaming material; nanostructure; structural property; Anodes; Electron tubes; Glass; Plasma temperature; Scanning electron microscopy; Surface treatment; Carbon material; Field emitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location
Wuppertal
ISSN
pending
Print_ISBN
978-1-4577-1243-2
Electronic_ISBN
pending
Type
conf
Filename
6004549
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