DocumentCode
551328
Title
Scaling of high aspect ratio current limiters for the individual ballasting of large arrays of field emitters
Author
Guerrera, Stephen A. ; Velásquez-García, Luis F. ; Akinwande, Akintunde I.
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2011
fDate
18-22 July 2011
Firstpage
83
Lastpage
84
Abstract
We report the fabrication and characterization of deep submicron high-aspect-ratio current limiters for ballasting individual field emitters within field emitter arrays. These vertical ungated field-effect transistors (FETs) show current-source like behavior, with saturation currents up to 15 pA / FET.
Keywords
current limiters; field effect transistors; field emitter arrays; FET; field emitter arrays; field-effect transistors; high aspect ratio current limiters; individual ballasting; large arrays; Contact resistance; Electronic ballasts; FETs; Fabrication; Field emitter arrays; Logic gates; Silicon; Ballasting; Si field emission arrays (FEAs); cathodes; electron supply control; vertical ungated Si field-effect transistors (FETs);
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location
Wuppertal
ISSN
pending
Print_ISBN
978-1-4577-1243-2
Electronic_ISBN
pending
Type
conf
Filename
6004573
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