Selective deposition of carbon nanowalls and investigation of their emission properties

In this work we discuss emission characteristics of carbon nanowalls on porous silicon. The samples used were n-type Si 4,5 Ω cm and p-type Si 3 Ω cm. Surface modifications were made using photoelectrochemical methods. After that, the carbon nanowalls were grown on the substrates using a PECVD method after which the emission characteristics were measured. The carbon nanostructures on porous silicon were grown without additional treatment. These samples show a low emission threshold and a good current density. Different etching regimes were studied. The maximum current density was more than 6 A/cm².