DocumentCode :
551761
Title :
Preparation of GaN powder and the theoretical calculation of optical properties
Author :
Zhang, Lu ; Wang, Xuewen ; Yang, Yi
Author_Institution :
Coll. of Inf. Sci. & Technol., Northwest Univ., Xi´´an, China
Volume :
2
fYear :
2011
fDate :
29-31 July 2011
Abstract :
In this paper, the sol-gel method is used to prepare the nano GaN powder, we use Ga2O3 as gallium source, NH3 as nitrogen source, citric acid as the chelating agent to prepare the former drive material, after to be jello, and we put it into NH3 environment to get the nano GaN sample. When CA:Ga=1:1, PH value is 7, pretreatment temperature is 400°C, annealing temperature is 950°C, we can get the GaN powder material which has good quality and crystallinity. The photoluminescence peaks by PL spectrum show that GaN has good optical performance, through the first principle calculation we know that the optical performance parameters fit well with the experimental value.
Keywords :
III-V semiconductors; ab initio calculations; annealing; gallium compounds; nanofabrication; nanoparticles; photoluminescence; semiconductor growth; sol-gel processing; wide band gap semiconductors; GaN; annealing temperature; chelating agent; crystallinity; first principle calculation; gallium nitride powder; nanopowder; optical propery; photoluminescence; sol-gel method; temperature 950 degC; Absorption; Annealing; Atomic clocks; Carbon; Crystals; Gallium nitride; Optical computing; GaN powder; PL spectrum; Sol-Gel; optical property; theoretical calculation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian, Liaoning
Print_ISBN :
978-1-61284-275-2
Type :
conf
DOI :
10.1109/ICEOE.2011.6013161
Filename :
6013161
Link To Document :
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