DocumentCode
551849
Title
Study on Millisecond and Nanosecond laser-induced damage of TiO2 /SiO2 anti-reflectors
Author
Wang, Bin ; Zhu, Dehua ; Lu, Jian ; Ni, Xiaowu ; Shen, Zhonghua
Author_Institution
Sch. of Sci., Nanjing Univ. of Sci. & Technol., Nanjing, China
Volume
3
fYear
2011
fDate
29-31 July 2011
Abstract
The laser induced damage threshold (LIDT) of TiO2/SiO2 anti-reflectors (AR) acted by 10ns-1064nm and 1ms-1064nm lasers are investigated. The LITD at 10ns and 1ms pulse duration are 2.9J/cm2 and 290J/cm2, respectively. The damaged morphologies are observed by metallographic microscope. It is found that the damage during 10ns and 1ms pulse duration are film damage and substrate damage, respectively. Analysis of laser-induced damage on AR coatings is carried out by temperature field calculation. Theoretical results show that 1ms laser induced damage depth is deeper than that of the 10ns and meet experimental well.
Keywords
antireflection coatings; laser beam effects; silicon compounds; titanium compounds; TiO2-SiO2; antireflector coatings; laser induced damage threshold; metallographic microscopy; millisecond laser-induced damage; nanosecond laser-induced damage; temperature field calculation; time 1 ms; time 10 ns; wavelength 1064 nm; Educational institutions; Heating; Lasers; Optical films; Optical microscopy; Optical reflection; LIDT; damage depth; laser induced damage; optical thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location
Dalian, Liaoning
Print_ISBN
978-1-61284-275-2
Type
conf
DOI
10.1109/ICEOE.2011.6013323
Filename
6013323
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