Title :
Barrier layer effect on photoelectric properties of MSM photodetectors based on black silicon
Author :
Su, Yuanjie ; Jiang, Yadong ; Wu, Zhiming ; Zhao, Guodong
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper focuses on the influence of barrier layer on photoelectric properties of MSM photodetectors based on black silicon. Si3N4 barrier layers with different thickness were added between the black silicon layer and electrodes in the MSM structure by PECVD. According to the results, the thickness of barrier layer plays a crucial role in reducing the dark current and increasing the Signal Noise Rate(SNR) of the detector. In the end, we obtained an optimum thickness that could not only ensure a high SNR but also lead the photodetector to a great responsivity.
Keywords :
chemical vapour deposition; electrodes; metal-semiconductor-metal structures; photodetectors; semiconductor thin films; silicon; silicon compounds; MSM photodetectors; PECVD; Si3N4-Si; barrier layer; black silicon layer; electrodes; photoelectric properties; Absorption; Educational institutions; Micromechanical devices; RNA; Silicon; barrier layer; black silicon; dark current; photocurrent;
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
DOI :
10.1109/ICEOE.2011.6013370
