Barrier layer effect on photoelectric properties of MSM photodetectors based on black silicon

Author

Su, Yuanjie ; Jiang, Yadong ; Wu, Zhiming ; Zhao, Guodong

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

3

fYear

2011

fDate

29-31 July 2011

Abstract

This paper focuses on the influence of barrier layer on photoelectric properties of MSM photodetectors based on black silicon. Si₃N₄ barrier layers with different thickness were added between the black silicon layer and electrodes in the MSM structure by PECVD. According to the results, the thickness of barrier layer plays a crucial role in reducing the dark current and increasing the Signal Noise Rate(SNR) of the detector. In the end, we obtained an optimum thickness that could not only ensure a high SNR but also lead the photodetector to a great responsivity.

Keywords

chemical vapour deposition; electrodes; metal-semiconductor-metal structures; photodetectors; semiconductor thin films; silicon; silicon compounds; MSM photodetectors; PECVD; Si₃N₄-Si; barrier layer; black silicon layer; electrodes; photoelectric properties; Absorption; Educational institutions; Micromechanical devices; RNA; Silicon; barrier layer; black silicon; dark current; photocurrent;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Optoelectronics (ICEOE), 2011 International Conference on

Conference_Location

Dalian

Print_ISBN

978-1-61284-275-2

Type

conf

DOI

10.1109/ICEOE.2011.6013370

Filename

6013370