DocumentCode :
55202
Title :
Transistor Model Building for a Microwave Power Heterojunction Bipolar Transistor
Author :
Hai-Feng Wu ; Qian-Fu Cheng ; Shu-Xia Yan ; Qi-Jun Zhang ; Jian-Guo Ma
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Volume :
16
Issue :
2
fYear :
2015
fDate :
Mar-15
Firstpage :
85
Lastpage :
92
Abstract :
This article describes the detailed development of a large-signal transistor model for a microwave power heterojunction bipolar transistor (HBT). Based on the neurospace-mapping (Neuro-SM) technique, this model uses neural networks to map a coarse model space represented by the existing model simulations onto the fine model space represented by device measurements. This article tied for first place in the Microwave Transistor Modeling Student Design Competition at the 2014 IEEE International Microwave Symposium (IMS2014) held in Tampa, Florida.
Keywords :
electronic engineering computing; heterojunction bipolar transistors; microwave bipolar transistors; neural nets; power bipolar transistors; semiconductor device models; HBT; coarse model space; device measurements; large-signal transistor model; microwave power heterojunction bipolar transistor; model simulations; neural networks; neuro-SM technique; neurospace-mapping technique; Bipolar transistors; Computational modeling; Data models; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Microwave devices; Solid modeling; Transistors;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2014.2377588
Filename :
7032047
Link To Document :
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