Title :
Growth and characterization of III–V compound semiconductor nanowires
Author :
Gao, Q. ; Tan, H.H. ; Jackson, H.E. ; Smith, L.M. ; Yarrison-Rice, J.M. ; Zou, Jin ; Johnston, M. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
Keywords :
III-V semiconductors; MOCVD; Raman spectra; aluminium compounds; band structure; field emission electron microscopy; gallium arsenide; gallium compounds; indium compounds; nanofabrication; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; GaAs-AlGaAs; GaAs-GaP; III-V compound semiconductor nanowires; InP; TEM; band structure; crystal structure; field emission scanning electron microscopy; light emission; metalorganic chemical vapor deposition; microRaman spectroscopy; microphotoluminescence spectroscopy; transmission electron microscopy; Crystals; Educational institutions; Gallium arsenide; Nanowires; Physics; Scanning electron microscopy; Transmission electron microscopy;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
