Title :
A comprehensive physics-based power MOSFET model in VHDL-AMS for circuit simulations
Author :
Gohler, Lutz ; Rose, M.
Author_Institution :
Lausitz Univ. Of Appl. Sci., Senftenberg, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
This paper presents a comprehensive Power MOSFET model for system and circuit simulation and its implementation in VHDL-AMS. The equation set features a non-quasi-static description of the body diode, a charge model for the inner MOSFET, self-heating and the inclusion of major parasitics. A comparison between simulation and measurement proves the good quality obtained.
Keywords :
circuit simulation; electronic engineering computing; hardware description languages; power MOSFET; semiconductor device models; VHDL-AMS; body diode; charge model; circuit simulations; comprehensive physics-based power MOSFET model; nonquasistatic description; Equations; Integrated circuit modeling; Logic gates; Mathematical model; Numerical models; Power MOSFET; Device modeling; MOS device; MOSFET; Power semiconductor device; Simulation;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
