Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications

Author

Sierra, M.T. ; Gabiola, Igor ; Pujana, A. ; Apinaniz, S. ; Ibanez, P.

Author_Institution

TECNALIA Res. & INNOVATION, Derio, Spain

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

8

Abstract

The aim of this paper is to show the reduction in energy losses obtained through experimentation when making use of Silicon Carbide (SiC) diodes instead of Si ones. In order to make the comparison as much accurate as possible both diodes were developed applying the same bonding and package techniques and were tested under exactly the same working conditions. Experimental voltage and current waveforms during the switching process and energy losses measurements are shown in the paper.

Keywords

bonding processes; electronics packaging; loss measurement; semiconductor diodes; silicon compounds; wide band gap semiconductors; Si diodes; SiC; SiC diodes; bonding; current waveforms; energy loss reduction; energy losses measurements; half-bridge modules; package; switching process; voltage waveforms; Current measurement; Insulated gate bipolar transistors; Schottky diodes; Silicon; Silicon carbide; Voltage measurement; Energy losses; Schottky diode; Silicon Carbide SiC; Wide bandgap devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020158