New 1700V SPT+ IGBT and diode chip set with 175°C operating junction temperature

In this paper we present a newly developed 1700V IGBT and diode chip set generation with optimized performances for 175°C junction temperature operations. The planar 1700V IGBT (SPT+) cell has been improved by exploiting the full potential of the N-enhancement layer with the consequent reduction of the conduction losses. In addition a substantial leakage current reduction has been achieved by designing a novel termination based on the biased ring concept. A new diode has been developed which uses the Field Shielded Anode (FSA) concept to enable a reduction of the high temperature leakage current by a factor of 3 when compared with the previous diode platform. This paper will illustrate the most important design features and based on measurement data discuss the chip set performances for low to medium inductance applications.