Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

Author

Tanay, Florent ; Dubois, Sebastien ; Veirman, Jordi ; Enjalbert, Nicolas ; Stendera, Julie ; Perichaud, Isabelle

Author_Institution

French Alternative Energies & Atomic Energy Comm., Le Bourget-du-Lac, France

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1241

Lastpage

1245

Abstract

The thermal donor (TD) generation in dopant-rich compensated Czochralski silicon was studied by pulling an ingot from a feedstock containing large amounts of donors and acceptors. In a wafer located in the vicinity of the change of conductivity type, thermal donors were formed and the evolution of their concentration was similar to that in noncompensated lowly boron-doped silicon. Thus, simultaneous high densities of both boron and phosphorus do not have a significant impact on the TD formation. This brings the experimental evidence that for a given oxygen concentration and annealing temperature, the TD formation is controlled by the electron density.

Keywords

annealing; boron; electron density; elemental semiconductors; oxygen; phosphorus; semiconductor doping; silicon; Si:B; annealing temperature; dopant-rich compensated Czochralski silicon; electron density; oxygen concentration; oxygen-related thermal donor formation; Annealing; Computational modeling; Conductivity; Kinetic theory; Semiconductor process modeling; Silicon; Compensation; Czochralski (Cz); oxygen (O); silicon (Si); thermal donor (TD); thermal donor (TD).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2311832

Filename

6780592