DocumentCode :
553561
Title :
Demonstration of 25 W/cm3 class all-SiC three phase inverter
Author :
Takao, Kazuto ; Shinohe, Takashi
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
fYear :
2011
fDate :
Aug. 30 2011-Sept. 1 2011
Firstpage :
1
Lastpage :
10
Abstract :
Silicon-carbide power devices are expected as next generation power devices due to their superior performances. This paper focuses on a performance evaluation of an all-SiC power converter in terms of high power density. A forced air-cooling type all-SiC three phase inverter has been built with currently available normally-on SiC-JFETs and SiC-SBDs and the feasible power density has been derived. The inverter consists of an all-SiC module, heat sink, cooling fans, dc-link capacitor bank, and gate drive unit. The volume of the inverter is 864 cm3. The power loss of the all-SiC module is measured in continuous operation tests. The experimental results and theoretical loss calculations show that high power density of 25 W/cm3 could be achieved.
Keywords :
Schottky diodes; cooling; heat sinks; invertors; junction gate field effect transistors; silicon compounds; JFET; SBD; Schottky barrier diodes; SiC; air-cooling type; cooling fans; dc-link capacitor bank; gate drive; heat sink; high power density; next generation power devices; three phase inverter; Capacitors; Current measurement; Heat sinks; Inverters; Logic gates; Silicon carbide; Temperature measurement; High power density systems; JFET; Power semiconductor device; Schottky diode; Silicon Carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
Type :
conf
Filename :
6020420
Link To Document :
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