• DocumentCode
    55358
  • Title

    Area Efficient ROM-Embedded SRAM Cache

  • Author

    Dongsoo Lee ; Roy, Kaushik

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    21
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    1583
  • Lastpage
    1595
  • Abstract
    There are many important applications, such as math function evaluation, digital signal processing, and built-in self-test, whose implementations can be faster and simpler if we can have large on-chip “tables” stored as read-only memories (ROMs). We show that conventional de facto standard 6T and 8T static random access memory (SRAM) bit cells can embed ROM data without area overhead or performance degradation on the bit cells. Just by adding an extra wordline (WL) and connecting the WL to selected access transistor of the bit cell (based on whether a 0 or 1 is to be stored as ROM data in that location), the bit cell can work both in the SRAM mode and in the ROM mode. In the proposed ROM-embedded SRAM, during SRAM operations, ROM data is not available. To retrieve the ROM data, special write steps associated with proper via connections load ROM data into the SRAM array. The ROM data is read by conventional load instruction with unique virtual address space assigned to the data. This allows the ROM-embedded cache (R-cache) to bypass tag arrays and translation look-aside buffers, leading to fast ROM operations. We show example applications to illustrate how the R-cache can lead to low-cost logic testing and faster evaluation of mathematical functions.
  • Keywords
    SRAM chips; cache storage; integrated circuit design; read-only storage; 6T static random access memory bit cell; 8T static random access memory bit cell; R-cache; SRAM array; area-efficient ROM-embedded SRAM cache; built-in self-test; digital signal processing; load instruction; logic testing; math function evaluation; on-chip tables; read-only memories; tag arrays; translation look-aside buffers; virtual address space; wordline; write steps; Arrays; Layout; Random access memory; Read only memory; Standards; System-on-a-chip; Transistors; Cache design; ROM-embedded static RAM (SRAM); SRAM design; random access memory (RAM); read-only memory (ROM);
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2012.2217514
  • Filename
    6329456