DocumentCode
55358
Title
Area Efficient ROM-Embedded SRAM Cache
Author
Dongsoo Lee ; Roy, Kaushik
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
21
Issue
9
fYear
2013
fDate
Sept. 2013
Firstpage
1583
Lastpage
1595
Abstract
There are many important applications, such as math function evaluation, digital signal processing, and built-in self-test, whose implementations can be faster and simpler if we can have large on-chip “tables” stored as read-only memories (ROMs). We show that conventional de facto standard 6T and 8T static random access memory (SRAM) bit cells can embed ROM data without area overhead or performance degradation on the bit cells. Just by adding an extra wordline (WL) and connecting the WL to selected access transistor of the bit cell (based on whether a 0 or 1 is to be stored as ROM data in that location), the bit cell can work both in the SRAM mode and in the ROM mode. In the proposed ROM-embedded SRAM, during SRAM operations, ROM data is not available. To retrieve the ROM data, special write steps associated with proper via connections load ROM data into the SRAM array. The ROM data is read by conventional load instruction with unique virtual address space assigned to the data. This allows the ROM-embedded cache (R-cache) to bypass tag arrays and translation look-aside buffers, leading to fast ROM operations. We show example applications to illustrate how the R-cache can lead to low-cost logic testing and faster evaluation of mathematical functions.
Keywords
SRAM chips; cache storage; integrated circuit design; read-only storage; 6T static random access memory bit cell; 8T static random access memory bit cell; R-cache; SRAM array; area-efficient ROM-embedded SRAM cache; built-in self-test; digital signal processing; load instruction; logic testing; math function evaluation; on-chip tables; read-only memories; tag arrays; translation look-aside buffers; virtual address space; wordline; write steps; Arrays; Layout; Random access memory; Read only memory; Standards; System-on-a-chip; Transistors; Cache design; ROM-embedded static RAM (SRAM); SRAM design; random access memory (RAM); read-only memory (ROM);
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2012.2217514
Filename
6329456
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