Perspectives of high-voltage SiC-semiconductors in high power conversion systems for wind and photovoltaic sources

Author

Araujo, Samuel Vasconcelos ; Zacharias, Peter

Author_Institution

KDEE (Centre of Competence for Distrib. Electr. Power Technol.), Univ. Kassel, Kassel, Germany

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

10

Abstract

SiC devices become increasingly interesting at higher blocking voltages against their Si-based counterparts in order to reduce losses and obtain cost savings by means of higher switching frequency and low component count. The possible gains along with an overview of related constraints valid at high power levels will be discussed in this publication, taking as example power conversion nstages for photovoltaic and wind energy systems.

Keywords

photovoltaic power systems; power convertors; silicon compounds; wide band gap semiconductors; wind power plants; SiC; cost savings; high power conversion systems; high-voltage semiconductors; loss reduction; photovoltaic energy systems; photovoltaic sources; wind energy systems; wind sources; Inverters; Logic gates; MOSFETs; Silicon; Silicon carbide; Switches; Temperature measurement; High Voltage Power Converters; Photovoltaic; Renewable energy systems; Silicon Carbide; Wind Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020514