DocumentCode :
55493
Title :
A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors
Author :
Tolstoy, Georg ; Peftitsis, Dimosthenis ; Rabkowski, Jacek ; Palmer, Patrick R. ; Nee, H.-P.
Author_Institution :
Lab. of Electr. Energy Conversion (E2C), KTH R. Inst. of Technol., Stockholm, Sweden
Volume :
29
Issue :
5
fYear :
2014
fDate :
May-14
Firstpage :
2408
Lastpage :
2417
Abstract :
Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter.
Keywords :
DC-DC power convertors; automotive electronics; power bipolar transistors; silicon compounds; wide band gap semiconductors; DC-DC boost converter; European drive cycle; current 40 A; discretized proportional base driver; energy 3459 J; ideal electric vehicle driving; maximum collector current; maximum junction temperature; on-state continuous base current; silicon carbide BJT; silicon carbide bipolar junction transistors; steady-state power consumption; voltage 1200 V; Junctions; Power demand; Silicon; Silicon carbide; Steady-state; Switches; Vehicles; Bipolar junction transistor (BJT); base driver; discretized base driver; driver; proportional base driver; proportional driver; silicon carbide (SiC);
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2013.2274331
Filename :
6566147
Link To Document :
بازگشت