DocumentCode
55609
Title
Bit-to-Bit Interference of Multibit Nanoelectromechanical Memory Cells (T Cells)
Author
Jae Hwan Han ; Kwanyong Kim ; Woo Young Choi
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Volume
13
Issue
4
fYear
2014
fDate
July 1 2014
Firstpage
659
Lastpage
666
Abstract
The bit-to-bit interference (BI) of multibit nano-electromechanical memory cells (T cells) has been investigated, and an analytical model of BI has been derived. The relationship between the BI and the cell size is discussed using both the analytical and the finite-element-method models. It has been found that BI is independent of the cell size as long as all the geometrical dimensions are scaled down in proportion. However, in actual cases, BI becomes more severe as the cell size decreases owing to the nonscaling parameters.
Keywords
finite element analysis; nanoelectromechanical devices; random-access storage; BI analytical model; T cells; bit-to-bit interference; cell size; finite-element-method models; geometrical dimensions; multibit nanoelectromechanical memory cells; nonvolatile memory; Analytical models; Arrays; Bismuth; Finite element analysis; Force; Interference; Structural beams; Bit-to-bit interference (BI); T cell; nanoelectromechanical (NEM) memory;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2014.2314217
Filename
6780614
Link To Document