• DocumentCode
    556391
  • Title

    High temperature calibration of a compact model for GaN-on-Si power switches

  • Author

    Stoffels, Steve ; Marcon, Denis ; Geens, Karen ; Kang, Xuanwu ; Van Der Plas, Geert ; Van Hove, Marleen ; Decoutere, Stefaan

  • Author_Institution
    Imec Leuven, Leuven, Belgium
  • fYear
    2011
  • fDate
    27-29 Sept. 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper a modified form of the Angelov model will be introduced (for Ids), suited for GaN-on-Si power switches. The temperature dependence of the model parameters were determined up to a temperature of 280°C. The model and measurements exhibited a good agreement over the entire temperature range.
  • Keywords
    III-V semiconductors; calibration; elemental semiconductors; gallium compounds; power semiconductor switches; semiconductor device models; silicon; wide band gap semiconductors; Angelov model; GaN-Si; GaN-on-Si power switches; high temperature calibration; temperature dependent model parameters; Current measurement; Gallium nitride; Integrated circuit modeling; Pulse measurements; Temperature dependence; Temperature measurement; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4577-0778-0
  • Type

    conf

  • Filename
    6081043
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=556391