• DocumentCode
    55713
  • Title

    On-chip blumlein pulse generator

  • Author

    Jiwei Sun ; Pingshan Wang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Clemson Univ., Clemson, SC, USA
  • Volume
    50
  • Issue
    12
  • fYear
    2014
  • fDate
    June 5 2014
  • Firstpage
    859
  • Lastpage
    860
  • Abstract
    A CMOS Blumlein generator including a two-stacked-metal-oxide semiconductor field effect transistor high-voltage switch, a Blumlein pulse-forming-line (PFL) network and an on-chip Klophenstein taper is presented. The Klophenstein taper is used to convert the high-impedance load to 50 Ω. The Blumlein pulse generator is fabricated in a 0.13 μm CMOS process. Gaussian-like pulses of 725 mV peak-to-peak amplitude, ~126 ps duration and 3.18 GHz bandwidth are measured on a 50 Ω load (including the losses of the probes, cables and pads). After de-embedding the connection system and Klophenstein taper, the pulses of 1.88 V and 114 ps duration are obtained, which are higher than the rated operating power supply of the given process.
  • Keywords
    CMOS integrated circuits; pulse generators; Blumlein pulse-forming-line network; CMOS process; Gaussian-like pulses; MOSFET high-voltage switch; PFL; frequency 3.18 GHz; on-chip Blumlein pulse generator; on-chip Klofenstein taper; size 0.13 mum; time 114 ps; two-stacked-metal-oxide semiconductor field effect transistor; voltage 1.88 V; voltage 725 mV;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.0485
  • Filename
    6836717