DocumentCode
55713
Title
On-chip blumlein pulse generator
Author
Jiwei Sun ; Pingshan Wang
Author_Institution
Dept. of Electr. & Comput. Eng., Clemson Univ., Clemson, SC, USA
Volume
50
Issue
12
fYear
2014
fDate
June 5 2014
Firstpage
859
Lastpage
860
Abstract
A CMOS Blumlein generator including a two-stacked-metal-oxide semiconductor field effect transistor high-voltage switch, a Blumlein pulse-forming-line (PFL) network and an on-chip Klophenstein taper is presented. The Klophenstein taper is used to convert the high-impedance load to 50 Ω. The Blumlein pulse generator is fabricated in a 0.13 μm CMOS process. Gaussian-like pulses of 725 mV peak-to-peak amplitude, ~126 ps duration and 3.18 GHz bandwidth are measured on a 50 Ω load (including the losses of the probes, cables and pads). After de-embedding the connection system and Klophenstein taper, the pulses of 1.88 V and 114 ps duration are obtained, which are higher than the rated operating power supply of the given process.
Keywords
CMOS integrated circuits; pulse generators; Blumlein pulse-forming-line network; CMOS process; Gaussian-like pulses; MOSFET high-voltage switch; PFL; frequency 3.18 GHz; on-chip Blumlein pulse generator; on-chip Klofenstein taper; size 0.13 mum; time 114 ps; two-stacked-metal-oxide semiconductor field effect transistor; voltage 1.88 V; voltage 725 mV;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.0485
Filename
6836717
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