DocumentCode :
557330
Title :
SiO2-metal cantilever structures under thermal and intrinsic stress
Author :
Tibeica, C. ; Damian, V. ; Muller, R.
Author_Institution :
Nat. Inst. for R&D in Microtechnologies, IMT-Bucharest, Bucharest, Romania
Volume :
1
fYear :
2011
fDate :
17-19 Oct. 2011
Firstpage :
167
Lastpage :
170
Abstract :
The mechanical behavior of multi-layered cantilever structures made of SiO2 coated with thin metal films (chromium and gold) is investigated considering the intrinsic and thermal stress. Experimental measurements and numerical simulations were performed to analyze the influence of residual stress components on such cantilever structures.
Keywords :
Young´s modulus; cantilevers; chromium; gold; internal stresses; metal-insulator boundaries; metallic thin films; multilayers; numerical analysis; silicon compounds; thermal stresses; SiO2-Au; SiO2-Cr; intrinsic stress; mechanical properties; multilayered cantilever structure; numerical simulation; residual stress component; thermal stress; thin metal films; Data models; Materials; Residual stresses; Temperature; Temperature measurement; Thermal stresses; FEM simulation; WLI characterization; cantilever; intrinsic stress; silicon oxide; thermal stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-61284-173-1
Type :
conf
DOI :
10.1109/SMICND.2011.6095747
Filename :
6095747
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=557330
بازگشت