Over 200-W high isolation GaN-switch for L-band radar module

We first demonstrated over 200-W-semiconductor switch for L-band radar module. We proposed the circuit topology, which consists of a series-configuration transistor in the transmitting side and two shunt-configuration transistors in conjunction with quarter-wave length transformers in the receiving one to realize for higher power, lower losses, and higher TR isolation. This switch can operate at single DC-voltage supply. As a result, we obtained 0.6-dB or less insertion loss and 40-dB TR isolation at over 200-W output power for L-band. These results indicate that our proposed switch can realize small and light weight radar modules with high output power.