Low loss zero-level packaging for high frequency RF applications by using PerMX dry film photoresist

Author

Kim, Janggil ; Seok, Seonho ; Sharma, Preeti ; Rolland, Nathalie ; Rolland, Paul-Alain

Author_Institution

IEMN, Villeneuve d´´Ascq, France

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

273

Lastpage

276

Abstract

This paper describes a novel method for low loss 0-level packaging of RF devices by using a PerMX dry film photoresist, which promises a low temperature, low cost, and high throughput process. RF characterization using Au microstrip lines showed that PerMX material exhibited dielectric constant of 3.0 and loss tangent of 0.02 at 10GHz. HFSS simulation results showed that the dimension of PerMX packaging caps did not have influence on RF transmission lines. 1.4×1.1-, 2.1×2.1-, and 5.1×5.1-mm²-sized PerMX packaging caps were fabricated on a 3-inch high-resistivity Si (HRSi) wafer and RF-characterized by using Au coplanar waveguide (CPW) lines to evaluate the influence of PerMX packaging caps in RF performance. The insertion loss change by packaging was below 0.05dB from DC to 60GHz.

Keywords

coplanar transmission lines; coplanar waveguides; dielectric losses; electronics packaging; high-frequency transmission lines; microstrip lines; permittivity; photoresists; CPW lines; HFSS simulation; PerMX dry film photoresist; PerMX material; PerMX packaging caps; RF devices; RF transmission lines; Si; coplanar waveguide lines; frequency 0 GHz to 60 GHz; high frequency RF applications; high-resistivity wafer; low loss zero-level packaging; microstrip lines; size 3 inch; Coplanar waveguides; Gold; Loss measurement; Packaging; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6101892