A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations

Author

Shi, Kanjun ; Calvillo-Cortes, David A. ; De Vreede, Leo C N ; Van Rijs, Fred

Author_Institution

Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

1103

Lastpage

1106

Abstract

A very compact, highly efficient, 65W wideband GaN class-E power amplifier is presented. Optimum class-E loading conditions are achieved over a broad frequency range using a wideband design and implementation approach. Both input and output matching networks are implemented with bondwire inductors and MOS/MIM capacitors. The resulting amplifier operates from 1.7 to 2.3GHz with a power gain of 12.3±0.9 dB, while providing an output power of 42 to 65W with a PAE ranging from 63 to 72% (DE of 68 to 75%). The total area of the amplifier, including bias arrangements, input and output matching networks to 50Ω, is only 2-by-2 cm².

Keywords

III-V semiconductors; UHF power amplifiers; capacitors; gallium arsenide; inductors; MOS-MIM capacitor; bondwire inductor; class-E loading condition; frequency 1.7 GHz to 2.3 GHz; matching network; power 42 W to 65 W; wideband class-E power amplifier; wideband design; Feeds; Gallium nitride; Impedance; Impedance matching; Inductance; Inductors; Wideband; Bondwire; Gallium Nitride (GaN); class-E; power amplifiers; power transistors; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6101903