DocumentCode
558270
Title
Implementation of the SIW Klopfenstein taper using a comb-SIW
Author
Byun, Jindo ; Lee, Hai-Young
Author_Institution
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fYear
2011
fDate
10-13 Oct. 2011
Firstpage
432
Lastpage
435
Abstract
The comb-substrate integrated waveguide (comb-SIW) and the SIW Klopfenstein taper are investigated and presented in this paper. By introducing comb-SIW, the characteristic impedance (ZC) of a SIW can be modified without changing the cut-off frequency (fc) and the width or height of the SIW. The ZC of a SIW can be increased by up to about 1.8 times using comb-SIW. Comb-SIW is used to implement the SIW Klopfenstein taper as an application of comb-SIW. The simulation and measurement results are presented to verify the analysis. The measured return loss of the SIW Klopfenstein taper is over 17.2 dB from 13 GHz to the TE20 mode fc.
Keywords
substrate integrated waveguides; SIW Klopfenstein taper; characteristic impedance; comb-SIW; comb-substrate integrated waveguide; frequency 13 GHz; loss 17.2 dB; Cutoff frequency; Impedance; Loss measurement; Power dividers; Scattering parameters; Substrates; Bloch impedance; Klopfenstein tapered line; Substrate-integrated waveguide (SIW);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2011 41st European
Conference_Location
Manchester
Print_ISBN
978-1-61284-235-6
Type
conf
Filename
6101914
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