DocumentCode
558345
Title
High power, wideband frequency doubler design using AlGaN/GaN HEMTs and filtering
Author
Wong, Claudia ; Yuk, Kelvin ; Branner, G.R. ; Bahadur, Syed Reza
Author_Institution
Electr. & Comput. Eng., Univ. of California, Davis, CA, USA
fYear
2011
fDate
10-13 Oct. 2011
Firstpage
587
Lastpage
590
Abstract
A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the use of filters to improve the bandwidth performance of a frequency doubler is described. Input and output networks consisting of a harmonic reflector and bandpass filter are designed to provide adequate bandwidth response and high power with small conversion gain. A demonstration circuit achieves 13.2% fractional bandwidth at fo=3.33 GHz with a maximum output power at 30.2 dBm.
Keywords
III-V semiconductors; aluminium compounds; band-pass filters; frequency multipliers; gallium compounds; high electron mobility transistors; microwave filters; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; bandpass filter; bandwidth 3.33 GHz; bandwidth response; harmonic reflector; high power doubler; wideband frequency doubler; Band pass filters; Bandwidth; Frequency conversion; Gallium nitride; HEMTs; MODFETs; Power generation; Frequency Converter; Frequency Multiplier; GaN; HEMT; High-Power;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2011 41st European
Conference_Location
Manchester
Print_ISBN
978-1-61284-235-6
Type
conf
Filename
6101989
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