• DocumentCode
    558452
  • Title

    Characterization of GaN and GaAs FETs through a new pulsed measurement system

  • Author

    Santarelli, Alberto ; Cignani, Rafael ; Niessen, Daniel ; D´Angelo, Sara ; Traverso, Pier Andrea ; Filicori, Fabio

  • Author_Institution
    Dept. of Electron., Univ. of Bologna, Bologna, Italy
  • fYear
    2011
  • fDate
    10-11 Oct. 2011
  • Firstpage
    1
  • Lastpage
    176
  • Abstract
    The paper introduces a new pulsed measurement system for the characterization of thermal and charge trapping effects in compound semiconductor III-V FETs. Minimization of reflections are obtained by pulse generation in a 50 Ω environment and separation between DC and AC path guarantees no variations of the average voltage values of pulses. Both GaAs- and GaN-based FETs are characterized and some differences between the two technologies are outlined as far as the charge trapping behaviour is concerned.
  • Keywords
    III-V semiconductors; electron traps; field effect transistors; gallium arsenide; gallium compounds; hole traps; pulse generators; pulse measurement; semiconductor device testing; wide band gap semiconductors; FET; GaAs; GaN; charge trapping effect; pulse generation; pulsed measurement system; thermal effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2011 European
  • Conference_Location
    Manchester
  • Print_ISBN
    978-1-61284-236-3
  • Type

    conf

  • Filename
    6102772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=558452