Title :
An improved large-signal model of GaN MISHEMT
Author :
Liu, Lin-Sheng ; He, Fan
Author_Institution :
Chengdu R&D Center, Ericsson (China) Commun. Co., Ltd., Chengdu, China
Abstract :
An empirical large-signal model for high power AlGaN/GaN metal-insulator-semiconductor HEMT (GaN MISHEMT) utilizing improved drain current (Ids) and gate charge (Qg) formulation is presented. The proposed modeling equations accurately model the asymmetric bell-shaped transconductance (Gm) characteristics and the peaking behaviors of gate capacitance (C11) over a wide bias range of operation. All the aspects of the model are validated for the 0.25 μm gate-lengths GaN MISHEMT process. The simulation results of DC/ Pulsed I-V, S-parameters, RF large-signal power and third-order intermodulation distortion (IM3) products show an excellent agreement with the measured data.
Keywords :
III-V semiconductors; MIS devices; S-parameters; gallium compounds; high electron mobility transistors; microwave circuits; wide band gap semiconductors; GaN; MISHEMT; RF large-signal power; S-parameters; drain current; gate capacitance; gate charge; large-signal model; metal-insulator-semiconductor HEMT; size 0.25 mum; third-order intermodulation distortion; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Mathematical model; Microwave theory and techniques; Solid modeling;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
