A high linearity, low noise amplifier module integrated with fail-safe bypass switch for tower mounted amplifier application

The paper describes the design and realization of a high linearity, low noise amplifier (LNA) module integrated with fail-safe bypass switch for tower mounted amplifier application. In the LNA mode, the device achieves a very low noise figure of 0.75B while maintaining high return losses of 20dB simultaneously. Biased at low current 5V@ 100mA, the module is capable of delivering input P1dB of 3dBm, input third order interception point (IIP3) of 20dBm, and gain of 15.5dB across an entire design bandwidth of 1.85GHz to 1.98GHz. In the bypass mode, the device offers a very low insertion loss of 0.8dB while achieving at least 55dB isolation between alternate paths to eliminate the possibility of oscillation issue. The MMIC LNA is fabricated in a chip size of 650 × 700um² using a proprietary 0.25um E-mode pHEMT technology and is housed in a 7 × 10mm² multi-chip-on-board (MCOB) package.