DocumentCode
558477
Title
A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Author
Schwantusche, D. ; Haupt, C. ; Kiefer, R. ; Brückner, P. ; Seelmann-Eggebert, M. ; Mikulla, M. ; Kallfass, I. ; Quay, R.
Author_Institution
Fraunhofer Inst. Appl. Solid-State Phys. (IAF), Freiburg, Germany
fYear
2011
fDate
10-11 Oct. 2011
Firstpage
656
Lastpage
659
Abstract
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using 100 nm AlGaN/GaN dual-gate HEMTs. For the fabricated dual-stage amplifier a continuous wave saturated output power of up to 24.8 dBm (0.84 W/mm) at 63 GHz for 20 V drain bias was measured. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
Keywords
aluminium compounds; coplanar transmission lines; field effect MIMIC; gallium compounds; high electron mobility transistors; integrated circuit design; millimetre wave amplifiers; AlGaN-GaN; continuous wave saturated output power; drain bias; dual-gate HEMT; dual-stage amplifier; frequency 56 GHz to 65 GHz; grounded coplanar transmission line; high-power amplifier MMIC design; size 100 nm; Gain; Gallium nitride; HEMTs; MMICs; MODFETs; Power amplifiers; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location
Manchester
Print_ISBN
978-1-61284-236-3
Type
conf
Filename
6102798
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