Title :
A 245 GHz CB LNA in SiGe
Author :
Mao, Yanfei ; Schmalz, K. ; Borngräber, J. ; Scheytt, J.C.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
The paper presents a four stage 245 GHz LNA in SiGe technology. Common base (CB) topology is chosen for each stage. The amplifier takes advantage of passives like transmission lines and MIM capacitors to realize the input, output and inter-stage matching for the LNAs. The LNA has 12 dB gain at 245 GHz, a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28mW. The amplifier is intended for the use in ISM band radar systems for consumer application and imaging radar.
Keywords :
Ge-Si alloys; capacitors; low noise amplifiers; millimetre wave amplifiers; transmission lines; CB LNA; ISM band radar; MIM capacitors; SiGe; SiGe technology; bandwidth 26 GHz; common base topology; four stage LNA; frequency 245 GHz; gain 12 dB; imaging radar; inter-stage matching; power 28 mW; transmission lines; voltage 2 V; Gain; Inductance; Noise figure; Silicon germanium; Topology; Transistors; Transmission line measurements; 245 GHz; LNA; SiGe; mm-wave circuit; transmission line;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
