Advanced RF characterization of new planar high sensitive zero-bias Schottky diodes

Author

Hoefle, Matthias ; Penirschke, Andreas ; Cojocari, Oleg ; Jakoby, Rolf

Author_Institution

Inst. of Microwave Eng. & Photonics, Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

89

Lastpage

92

Abstract

New zero-bias Schottky diodes with low junction capacitance and low differential resistance are characterized by applying DC and S-parameter measurements from 65-110 GHz. Diode versions with short and open circuits at the diode´s anode as well as biased measurements of the diode allow an advanced investigation to model the diode´s equivalent circuit. The extracted parameters provide an accurate RF model for nonlinear circuit simulations to design and realize diode detectors for direct detection receivers.

Keywords

S-parameters; Schottky diodes; semiconductor device models; DC measurement; RF characterization; S-parameter measurement; differential resistance; direct detection receiver; equivalent circuit; frequency 65 GHz to 110 GHz; junction capacitance; nonlinear circuit simulation; planar high sensitive zero-bias Schottky diode; Capacitance; Detectors; Electrical resistance measurement; Junctions; Resistance; Schottky diodes; Detectors; Millimeter wave measurements; Schottky diodes; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102811