Designing on-wafer calibration standards for advanced high-speed BiCMOS technology

Author

Rumiantsev, A. ; Pourchon, F. ; Derrier, N. ; Sakalas, P. ; Celi, D.

Author_Institution

Cascade Microtech GmbH, Sacka, Germany

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

57

Lastpage

60

Abstract

This work presents design methodology of on-wafer calibration standards covering frequencies up to 110 GHz and optimized for the BiCMOS processes. We discuss such topics as layout optimization of distributed and lumped standards, measurement and verification of electrical characteristics along with the definition of the on-wafer calibration reference impedance and measurement reference plane. Also, we present calibration verification results and some characteristics of an active DUT implemented in Si/SiGe:C ST Microelectronics´ BiCMOS9MW process technology.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; calibration; carbon; high-speed integrated circuits; integrated circuit design; DUT; ST Microelectronics; Si-SiGe:C; frequency 110 GHz; high-speed BiCMOS technology; layout optimization; measurement reference plane; on-wafer calibration reference impedance; on-wafer calibration standards; Calibration; Frequency measurement; Impedance; Metals; Microwave measurements; Silicon; Standards;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102822