InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications

Author

Schuh, P. ; Sledzik, Hardy ; Oppermann, M. ; Quay, R. ; Kühn, J. ; Lim, T. ; Waltereit, P. ; Mikulla, M. ; Ambacher, O.

Author_Institution

Cassidian Electron., Ulm, Germany

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

69

Lastpage

72

Abstract

Wideband amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband amplifier MMICs operate up to a frequency of 18GHz. A number of measurements have been performed, including small signal S-parameter and large signal power measurements. To our knowledge, these are the first MMICs based on InAlGaN/GaN HEMTs epitaxy for wideband applications in microstrip transmission line technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; S-parameters; aluminium compounds; gallium compounds; indium compounds; microstrip lines; wide band gap semiconductors; wideband amplifiers; InAlGaN-GaN; MMIC; T/R modules; active array antennas; high electron mobility transistor structures; large signal power measurements; microstrip transmission line technology; monolithically integrated circuits; small signal S-parameter; wideband amplifiers; wideband applications; Frequency measurement; Gain; Gain measurement; Gallium nitride; HEMTs; MMICs; Power generation; GaN; High Power Amplifier; InAlGaN; MMICs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102870