24 GHz transceiver front-end with integrated ramp generator

Author

Debski, Wojciech ; Winkler, Wolfgang ; Genschow, Dieter ; Kraemer, Rolf

Author_Institution

Silicon Radar GmbH, Frankfurt (Oder), Germany

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

21

Lastpage

24

Abstract

The paper presents a transceiver front-end MMIC intended for the operation in the license free ISM band from 24 GHz to 24.25 GHz and in the UWB band around 24GHz. The radar principle is FMCW. The chip comprises a low-noise-amplifier (LNA) with gain control, quadrature mixers, polyphase filter, Voltage Controlled Oscillator, frequency measurement unit and digital ramp generation unit with internal memory. All the functionality inside the chip is managed via SPI controller. The chip is fabricated in SiGe BiCMOS technology with a chip area of 1.7 × 1.2 mm².

Keywords

BiCMOS integrated circuits; CW radar; FM radar; Ge-Si alloys; field effect MMIC; ramp generators; transceivers; BiCMOS technology; FMCW radar principle; ISM band; LNA; SPI controller; SiGe; UWB band; digital ramp generation unit; frequency 24 GHz to 24.25 GHz; frequency measurement unit; gain control; integrated ramp generator; internal memory; low-noise-amplifier; polyphase filter; quadrature mixer; transceiver front-end MMIC; voltage controlled oscillator; Frequency measurement; Gain; Oscillators; Radar; Random access memory; Receivers; Tuning; FMCW; SiGe-MMIC; radar transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102872