Title :
Analysis of the unbalanced feeding effect on discrete device with large die size
Author :
Mu, Qianli ; Bartlow, Howard ; Poulton, Matthew
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
This paper focuses on analyzing the unbalanced feeding effect on RF power transistors, which can be generated from the input and output transition structures when they are connected to a relatively large size die. Such an effect can cause degradation of device´s RF performance. A TGF2023-10 transistor assembled inside a PowerBand™ package is used as an example to illustrate the effect. By modeling the input and output transition structures as one-port to multi-port transition networks, parameters based on the total difference of the transmission and reflection coefficients on the multi-port side are defined to quantify the unbalanced feeding effect.
Keywords :
III-V semiconductors; electromagnetic wave reflection; gallium compounds; power transistors; wide band gap semiconductors; RF power transistors; TGF2023-10 transistor; input transition structures; large die size; multi port transition networks; one port transition networks; output transition structures; reflection coefficients; transmission coefficients; unbalanced feeding effect; Degradation; FETs; Load modeling; Performance evaluation; Power generation; Radio frequency; Discrete device; Gallium Nitride; power scaling and unbalanced feeding effect;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
