• DocumentCode
    558561
  • Title

    Novel realisation of a broadband high-efficiency continuous class-F power amplifier

  • Author

    Tuffy, Neal ; Zhu, Anding ; Brazil, Thomas J.

  • Author_Institution
    RF & Microwave Res. Group, Univ. Coll. Dublin, Dublin, Ireland
  • fYear
    2011
  • fDate
    10-11 Oct. 2011
  • Firstpage
    120
  • Lastpage
    123
  • Abstract
    This work outlines the analysis and design procedure employed for the realisation of a broadband Continuous Class-F power amplifier. Waveform analysis is used in determining the most sensitive parameters for maintaining high efficiency over a desired bandwidth. A design methodology is then employed for control of the dominant parameters over the band of interest, while preserving maximum fundamental output power. By using a commercially available GaN Cree 10W HEMT transistor, an amplifier was fabricated which is operational over a 20% bandwidth. Greater than 11.4W of output power is found with efficiencies between 65-76% measured over the band from 2.15-2.65GHz. An average drain efficiency of 70.5% and PAE of 65% is obtained with a corresponding average output power of 13.5W.
  • Keywords
    HEMT circuits; III-V semiconductors; UHF power amplifiers; gallium compounds; network analysis; network synthesis; wide band gap semiconductors; wideband amplifiers; GaN; HEMT transistor; broadband high efficiency power amplifier; class F power amplifier; design methodology; dominant parameter; efficiency 65 percent to 76 percent; frequency 2.15 GHz to 2.65 GHz; power 10 W; power 13.5 W; sensitive parameter; waveform analysis; Bandwidth; Broadband amplifiers; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Class-F; Power Amplifier; broadband; high efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2011 European
  • Conference_Location
    Manchester
  • Print_ISBN
    978-1-61284-236-3
  • Type

    conf

  • Filename
    6102882