The impact of uniaxial strain on flicker noise and random telegraph noise of SiC strained nMOSFETs in 40nm CMOS technology

Author

Yeh, Kuo-Liang ; Chang, Chih-Shiang ; Guo, Jyh-Chyurn

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

73

Lastpage

76

Abstract

The impact of uniaxial strain on flicker noise and random telegraph noise (RTN) was investigated in frequency and time domains, respectively. Both control and SiC strained nMOS reveal flicker noise dominated by number fluctuation model but the latter one with uniaxial strain suffers significantly higher noise. RTN measured from SiC strained nMOS features a complex spectrum with multi-level drain current fluctuation amplitudes. The capture time (t_c), emission time (x_e), and effective trap depth (Z_eff) can be extracted to explore the impact from the uniaxial strain on trap properties, RTN, and flicker noise.

Keywords

CMOS integrated circuits; MOSFET; flicker noise; frequency-domain analysis; time-domain analysis; CMOS technology; RTN; SiC; capture time; complex spectrum; effective trap depth; emission time; frequency domain; multilevel drain current fluctuation amplitudes; nMOS reveal flicker noise; nMOSFET; random telegraph noise; size 40 nm; time domain; trap property; uniaxial strain; 1f noise; Fluctuations; MOS devices; Noise measurement; Silicon carbide; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102892