Optimization of LDMOS power transistors for high power microwave amplifiers using highly efficient physics-based model

A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This nonlinear, process-oriented, model accounts for avalanche breakdown, hot carriers and process variations, and accurately predicts DC and microwave characteristics. The model has been applied to the optimization of LDMOS structures and shows good agreement over a wide range of structural variations. It is over three orders of magnitude faster than conventional two-dimensional physical models whilst maintaining a high level of accuracy, which makes it ideally suited to microwave CAD.