Electrical characterization of millimeter-wave interconnects on low-k and low-loss oxides for advanced 3D silicon interposers

This paper presents electrical characterization of millimeter wave interconnects on oxides to realize routing layers and through-Silicon-Vias interconnections in 3D silicon interposers. As a compromise has to be found between good RF performances and temperature compliant with 3D integration technology, a wide variety of oxide insulators are tested using coplanar waveguide transmission lines. Effects increasing microwave losses are discussed, mainly losses due to the presence of charge carriers at the silicon/oxide interface but also due to light radiation and environment.