DocumentCode
559718
Title
Terahertz injection locked oscillation in plasmon-resonant transistors
Author
Watanabe, T. ; Tanimoto, Yudai ; Satou, Akira ; Otsuji, Taiichi
Author_Institution
RIEC: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2011
fDate
Oct. 30 2011-Nov. 2 2011
Firstpage
1
Lastpage
2
Abstract
We experimentally and analytically investigated the possibility of injection locked oscillation in a plasmon-resonant dual-grating-gate high-electron mobility transistor to the difference terahertz frequency component of photomixed dual CW laser irradiation. Although the perfect injection locking has not yet been obtained the device model we newly formulate will lead to find practical solutions of successful operation.
Keywords
high electron mobility transistors; injection locked oscillators; plasmons; submillimetre wave oscillators; submillimetre wave transistors; device model; high electron mobility transistor; photomixed dual CW laser irradiation; plasmon-resonant transistors; terahertz frequency component; terahertz injection locked oscillation; Gratings; Indium tin oxide; Lasers; Nonlinear optical devices; Optical variables measurement; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microopics Conference (MOC), 2011 17th
Conference_Location
Sendai
Print_ISBN
978-1-4577-1344-6
Type
conf
Filename
6110270
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