3D modeling of active pixel sensor with microlens

Author

Xiao, Y.G. ; Li, Z. M Simon ; Uehara, K. ; Lestrade, M. ; Li, Z.Q.

Author_Institution

Crosslight Software Inc., Burnaby, BC, Canada

fYear

2011

fDate

Oct. 30 2011-Nov. 2 2011

Firstpage

1

Lastpage

2

Abstract

Three dimensional modeling of active pixel sensor with microlens is reported by using an advanced drift-diffusion simulator together with finite difference time domain method for optical effect in this work. The opto-electronic responses are presented versus various power intensity and illumination wavelength. The aperture size of the isolated metal layer is also discussed. Whereas microlens is shown to improve the sensitivity, the aperture size of the isolated metal layer should be optimized to avoid sensitivity loss. The presented results demonstrate a methodological and technical capability for 3D modeling optimization of complex CMOS image sensor.

Keywords

CMOS image sensors; finite difference time-domain analysis; integrated optoelectronics; microlenses; optical losses; optimisation; physics computing; 3D modeling optimization; active pixel sensor; advanced drift diffusion simulator; aperture size; complex CMOS image sensor; finite difference time domain method; illumination wavelength; isolated metal layer; microlens; optical effect; optoelectronic responses; power intensity; sensitivity loss; Apertures; CMOS integrated circuits; Optical imaging; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microopics Conference (MOC), 2011 17th

Conference_Location

Sendai

Print_ISBN

978-1-4577-1344-6

Type

conf

Filename

6110326