• DocumentCode
    55992
  • Title

    Cost-Effective Schottky-Barrier Diode Array With Ni–Silicidation Accessing Low Power Phase-Change Memory

  • Author

    Yan Liu ; Chao Zhang ; Zhitang Song ; Bo Liu ; Guanping Wu ; Jia Xu ; Lianhong Wang ; Lei Wang ; Zuoya Yang ; Songlin Feng

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
  • Volume
    61
  • Issue
    3
  • fYear
    2014
  • fDate
    Mar-14
  • Firstpage
    682
  • Lastpage
    687
  • Abstract
    A cost-effective fabrication of Schottky-barrier (SB) diode steering element for low power phase-change memory (PCM) application is realized. While superior drivability in conventional PN diode array, SB diode array with 0.0193- μm2 (5F2), performing higher switching speed, sufficient drive current density of ~ 26.30 mA/μm2, disturbance immunity, and lower power consumption has been manufactured under 40-nm standard complementary metal oxide semiconductor technology. Simultaneously, different performance specifications, including integration scheme, JON/JOFF ratio, temperature characteristics, and scalability have been studied in detail and compared in two categories of accessing diode arrays. It manifests that the scaled SB diode array is suitable for full operation of PCM.
  • Keywords
    CMOS memory circuits; Schottky barriers; Schottky diodes; low-power electronics; nickel; phase change memories; Ni; PCM; PN diode array; SB diode steering element; complementary metal oxide semiconductor technology; cost-effective fabrication; cost-effective schottky-barrier diode array; current density; disturbance immunity; integration scheme; low power phase-change memory; lower power consumption; nickel-silicidation; scaled SB diode array; size 40 nm; temperature characteristics; Arrays; Junctions; Phase change materials; Power demand; Schottky diodes; Temperature; Cost-effective; Schottky diode array; low power consumption; phase-change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2296591
  • Filename
    6709678