Electromagnetic susceptibility of low frequency bipolar transistors subject to the total ionizing dose effect

Author

Doridant, A. ; Raoult, J. ; Blain, A. ; Jarrix, S. ; Dusseau, L. ; Hoffmann, P. ; Chatry, N. ; Calvel, P.

Author_Institution

Inst. d´´Electron. du Sud (IES), Univ. Montpellier II, Montpellier, France

fYear

2011

fDate

6-9 Nov. 2011

Firstpage

105

Lastpage

110

Abstract

Space or military electronic devices are subject to both electromagnetic fields and total ionizing dose. The reliability of a discrete low frequency transistor is addressed by means of electromagnetic susceptibility measurements after total ionizing dose. The bipolar transistors under test are subject to high frequency interferences in the near-field zone with 100MHz-1.5GHz signals. For comparison, the electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in a common emitter configuration. The goal is to predict the reliability of simple devices on a mission time scale.

Keywords

bipolar transistors; electromagnetic fields; electromagnetic interference; integrated circuit reliability; common emitter; electromagnetic fields; electromagnetic susceptibility; frequency 100 MHz to 1.5 GHz; high frequency interferences; low frequency bipolar transistors; military electronic devices; reliability; space electronic devices; total ionizing dose effect; Bipolar transistors; Electromagnetic compatibility; Electromagnetic interference; Electromagnetics; Integrated circuits; Radiation effects; Transistors; Bipolar Transistor; Electromagnetic Susceptibility; Near-field interference; Total ionizing dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2011 8th Workshop on

Conference_Location

Dubrovnik

Print_ISBN

978-1-4577-0862-6

Type

conf

Filename

6130076