DocumentCode
560488
Title
Local electromagnetic coupling with CMOS integrated circuits
Author
Poucheret, F. ; Chusseau, L. ; Robisson, B. ; Maurine, P.
Author_Institution
LIRMM, Montpellier, France
fYear
2011
fDate
6-9 Nov. 2011
Firstpage
137
Lastpage
141
Abstract
This paper gives experimental evidences of how a local electromagnetic coupling can be created between a micro-antenna and the buried Power Ground Network (PGN) of a 350nm VLSI circuit; the PGN being integrated in Metal 1, the deepest metal layer available in the considered technology. The local EM injection method applied to create this coupling is introduced in this paper even if it presents some similarities with direct power injection.
Keywords
CMOS integrated circuits; VLSI; electromagnetic coupling; CMOS integrated circuit; EM injection method; PGN; VLSI circuit; direct power injection; electromagnetic coupling; microantenna; power ground network; size 350 nm; Conferences; Couplings; Electromagnetic compatibility; Integrated circuits; Metals; Probes; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2011 8th Workshop on
Conference_Location
Dubrovnik
Print_ISBN
978-1-4577-0862-6
Type
conf
Filename
6130082
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