Review op X-ray lithography technology

X-ray lithography using an Al_k source (8.34 Å) and masks consisting of gold absorber patterns on single-crystal silicon membranes has been successfully applied to the fabrication of surface wave delay lines, and silicon diodes and transistors. The status of this work and the advantages of using silicon masks will be reviewed. The use of Al_k (8.34 Å) and Cu_L (13.3 Å) sources to replicate gratings with linewidths $1800 Å will be reported on. The Cu_L source leads to longer exposure times. however it is capable of higher resolution and better control of polymer sidewall profiles.