Progress on an electron beam addressed memory tube for high-capacity, fast access, low cost memory systems

The development of an experimental Electron Beam Addressed Memory (EBAM) module is described. The module is limited to 65,536 address locations, but its development verifies that tubes of approximately 4 × 10⁶ bits can now be made. The key factors that lead to a practical, stable device are discussed. Emphasis is given to the development of the storage target and its mode of use. The paper shows how a simple refresh technique is used to retain information, provide a nondestructive readout capability, and achieve long-term address stability.