• DocumentCode
    563785
  • Title

    Ferroelectric thin films prepared by backside pulsed ion-beam evaporation

  • Author

    Sonegawa, T. ; Arakaki, T. ; Maehama, T. ; Jiang, W. ; Yatsui, K.

  • Author_Institution
    Department of Electrical and Electronic Engineering, Univ. of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • fYear
    2000
  • fDate
    20-25 June 2000
  • Firstpage
    406
  • Lastpage
    409
  • Abstract
    Ferroelectric (PbTiO3 or Pb(Zr,Ti)O3) thin films have been successfully prepared on Si(100) or pyrex glasses by backside deposition of intense pulsed ion beam evaporation. The ion beam parameters were typically beam energy = 1.3 MeV, ion-current density on target = 0.7 kA/cm2, pulse duration = 50 ns. The composition of the thin films was good agreement with that of the original target. The relative dielectric constant at 1 kHz was obtained to be 20, while that by normal front side deposition was 150.
  • Keywords
    Atomic layer deposition; Crystallization; Lead; Substrates; Pb(Zr,Ti)O3; PbTiO3; ferroelectric film; ion-beam evaporation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High-Power Particle Beams, 2000 13th International Conference on
  • Conference_Location
    Nagaoka, Japan
  • Type

    conf

  • Filename
    6220195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563785