Surface potential model of a high-k HfO2-Ta2O5 capacitor

Author

Angelov, George ; Bonev, Nikolay ; Rusev, Rostislav ; Hristov, Marin ; Paskaleva, Albena

Author_Institution

Dept. of Microelectron., Tech. Univ. of Sofia, Sofia, Bulgaria

fYear

2012

fDate

24-26 May 2012

Firstpage

386

Lastpage

391

Abstract

A compact model of a MOS capacitor with high-k HfO₂-Ta₂O₅ mixed layer stack is developed in Matlab. Model equations are based on the surface potential description of PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language to interface with Spectre circuit simulator within Cadence CAD system. The results are validated against experimental measurements of high-k dielectric structure.

Keywords

CAD; MOS capacitors; hafnium compounds; hardware description languages; semiconductor device models; tantalum compounds; Cadence CAD system; HfO₂-Ta₂O₅; MOS capacitor; Matlab; PSP model; Spectre circuit simulator; Verilog-A hardware description language; high-k capacitor; high-k dielectric structure; high-k mixed layer stack; surface potential model; Electric potential; Equations; Fitting; High K dielectric materials; Integrated circuit modeling; Logic gates; Mathematical model; Device modeling; PSP; Spectre; Verilog-A; circuit simulation; compact models; high-k gate dielectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference

Conference_Location

Warsaw

Print_ISBN

978-1-4577-2092-5

Type

conf

Filename

6226213