Title :
Ballistic transport in nanoscale devices
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia
Abstract :
Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime.
Keywords :
ballistic transport; ballistics; carrier mean free path; electrical contacts; statistics; ballistic injection; ballistic transport; channel scale; equilibrium Fermi-Dirac-Boltzmann; gamut; high-field drift velocity expression; intrinsic velocity; low-field ballistic mobility; nanoscale device; nondegeneration statistic; nonequilibrium Arora distribution; scattering-limited mean free path; scattering-limited mfp; scattering-limited stochastic; statistic degeneration; unilateral streamlined regime; Ballistic transport; Distribution functions; Electric fields; Electron mobility; Equations; Neodymium; Vectors; NEADF; ballistic mobility; contacts injection; intrinsic velocity; nonequilibrium Arora Dsitribution; phonon emission;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5